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You are here: Home1 / Shop2 / Power Electronics Development Modules3 / Gate Driver Boards4 / GDX-4A2S1

2 Channel High Speed SiC MOSFET/IGBT Gate Driver Board
GDX-4A2S1

DATASHEET.STEP

GDX-4A2S1 SiC Gate Driver Module Board

Applications

✓ 2 Switch Isolated SiC/IGBT/MOSFET Gate Driver

✓ PFC Rectifiers

✓ DC-DC Converters

✓ Switched Mode Power Supplies

Features

✓ Suitable for 1200V SiCs, IGBTs & MOSFETs up-to 120A
✓ 30ns propagation delay, 100KV/us CMR
✓ 5MHz Max. Frequency Operation
✓ 20ns Min. Pulse Width
✓ 1200 Vdc working voltage with 3 KVac isolation
✓ Configurable dead-time, PWM/High-Low/Dual modes

Configure and Buy

94.00 $ USD

Quantity Price
1-9 10-49 50+
94.00 $ 84.60 $ 75.20 $
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Specifications

Parameter Value Unit Parameter Value Unit
Output Channels 2 – Output Voltage +20/-5. +18/0, +15/0, +15/-5, +15/-15 V
Peak Output Current 4 A Avg. Output Power per Channel 500 mW
Input to Output Isolation 3000 Vac Max. Working Insulation Voltage 1200 V
Max. Propagation Delay 30 ns Min. Common Mode Rejection (CMR) 100 kV/us
Operating Temperature -25 to +70 °C Maximum Frequency 5 MHz
Input Modes Configurable PWM / High-Low / Dual – Dead-Time User Adjustable –

* Note 1: All ratings are given at Vs=15V and 25°C ambient temperature unless otherwise specified.

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