2 Channel High Speed SiC MOSFET/IGBT Gate Driver Board
GDX-4A2S1
Applications
✓ 2 Switch Isolated SiC/IGBT/MOSFET Gate Driver ✓ PFC Rectifiers ✓ DC-DC Converters ✓ Switched Mode Power Supplies
✓ DC-DC Converters ✓ Switched Mode Power Supplies
Features
✓ Suitable for 1200V SiCs, IGBTs & MOSFETs up-to 120A
✓ 30ns propagation delay, 100KV/us CMR
✓ 5MHz Max. Frequency Operation
✓ 20ns Min. Pulse Width
✓ 1200 Vdc working voltage with 3 KVac isolation
✓ Configurable dead-time, PWM/High-Low/Dual modes
Specifications
| Parameter | Value | Unit | Parameter | Value | Unit |
|---|---|---|---|---|---|
| Output Channels | 2 | – | Output Voltage | +20/-5. +18/0, +15/0, +15/-5, +15/-15 | V |
| Peak Output Current | 4 | A | Avg. Output Power per Channel | 500 | mW |
| Input to Output Isolation | 3000 | Vac | Max. Working Insulation Voltage | 1200 | V |
| Max. Propagation Delay | 30 | ns | Min. Common Mode Rejection (CMR) | 100 | kV/us |
| Operating Temperature | -25 to +70 | °C | Maximum Frequency | 5 | MHz |
| Input Modes | Configurable PWM / High-Low / Dual | – | Dead-Time | User Adjustable | – |
* Note 1: All ratings are given at Vs=15V and 25°C ambient temperature unless otherwise specified.
